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| CLT130W, CLT131W, CLT132W NPN Silicon Phototransistors The CLT130W, CLT131W and CLT132W are exact replacements for obsolete part numbers CLT2020, CLT2030 and CLT2035. 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.190 (4.83) 0.176 (4.47) (R) Clairex 0.215 (5.46) 0.205 (5.21) Technologies, Inc. July, 2001 COLLECTOR 0.160 (4.06) 0.150 (3.81) BASE EMITTER 0.100 (2.54) dia 0.010 (0.25) max 0.025 (0.64) max 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48) ALL DIMENSIONS ARE IN INCHESCase 18 (MILLIMETERS) Collector electrically connected to case. features absolute maximum ratings (TA = 25C unless otherwise stated) storage temperature ...................................................................... -65C to +200C * high sensitivity operating temperature.................................................................... -65C to +150C * 35 acceptance angle (1) * TO-18 hermetically sealed package lead soldering temperature ......................................................................... 260C collector-emitter voltage..................................................................................... 30V * transistor base is bonded continuous collector current(2) ......................................................................... 50mA * RoHS compliant continuous power dissipation(3) .................................................................... 250mW description notes: The CLT130W, CLT131W and 1. 0.06" (1.5mm) from the header for 5 seconds maximum. CLT132W are silicon NPN planar 2. 200mA when pulsed at 1.0ms, 10% duty cycle. epitaxial phototransistors mounted in 3. Derate linearly 1.6mW/C from 25C free air temperature to TA = +150C. TO-18 flat window packages. The wide acceptance angle provided by the flat window enables even reception over a relatively large area. For additional information, call Clairex electrical characteristics (TA = 25C unless otherwise noted) symbol parameter Light current(4) IL ICEO V(BR)CEO V(BR)CBO V(BR)ECO VCE(sat) tr, tf HP notes: min CLT130W CLT131W CLT132W 0.4 1.0 2.5 30 5.0 5.0 - typ 3.0 70 max 25 0.30 - units mA mA mA nA V V V V s deg. test conditions VCE=5V, Ee=5.0mW/cm2 VCE=5V, Ee=5.0mW/cm2 VCE=5V, Ee=5.0mW/cm2 VCE=10V, Ee=0 IC=100A, Ee=0 IC=100A, Ee=0 IE=100A, Ee=0 IC=0.4mA, Ee=5.0mW/cm2 VCC=5V, RL=1K Collector dark current Collector-emitter breakdown Collector-base breakdown Emitter-collector breakdown Collector-emitter saturation voltage Output rise and fall time(5) Total angle at half sensitivity points 4. Radiation source for all light current testing is a 850nm IRED. 5. The radiation source is a pulsed gallium arsenide IRED with rise and fall times of 0.3s. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 3/22/06 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com |
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